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Electron Transport in Amorphous (Ti, Nb)O 2 Solid Solutions
Author(s) -
Lagnel F.,
Poumellec B.,
Picard C.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510213
Subject(s) - delocalized electron , amorphous solid , quantum tunnelling , materials science , electrical resistivity and conductivity , sputtering , seebeck coefficient , condensed matter physics , thermal conduction , argon , electron , electron transfer , analytical chemistry (journal) , chemistry , crystallography , atomic physics , thermal conductivity , thin film , physics , nanotechnology , optoelectronics , organic chemistry , quantum mechanics , composite material , chromatography
Amorphous 1 μm thick (Ti, Nb)O 2 films are prepared by r.f. sputtering in an argon atmosphere. Resistivity and thermopower measurements are carried out from room temperature up to 700 K in order to study the influence of the structural disorder on the electron transport properties. Experimental data are interpreted in the framework of Hurd's model, i.e. a hopping model including the temperature dependence of the tunnelling probability. Moreover, the analysis of the thermopower versus the Nb content indicates a partial electron transfer from Nb to Ti. On the other hand, these results suggest that, for the corresponding crystalline solid solutions at T > > 800K, the conduction is also caused by hopping and not delocalized.