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The Selective Trapping of Arsenic Interstitial Atoms by Impurities in Gallium Arsenide
Author(s) -
Collins J. D.,
Gledhill G. A.,
Murray R.,
Nandhra P. S.,
Newman R. C.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510207
Subject(s) - trapping , gallium arsenide , arsenic , impurity , gallium , electron , irradiation , atomic physics , materials science , doping , neutron , radiochemistry , chemistry , optoelectronics , physics , nuclear physics , biology , metallurgy , ecology , organic chemistry
Carbon doped GaAs is irradiated either with fast neutrons (1 MeV) or2 electrons (2 MeV). Complexes previously labelled C(1) are produced and the fine structure of the two LVM lines is discussed. A comparison is made with the B Ga As i complex and it is concluded that the C(1) centre is a C As As i defect. The defect dissociates at about 150 °C.