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Effect of a Random Potential on the Resonant One‐LO‐Phonon Raman Process
Author(s) -
Klochikhin A. A.,
Ogloblin S. G.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510136
Subject(s) - phonon , exciton , raman spectroscopy , raman scattering , physics , excitation , gaussian , condensed matter physics , quantum mechanics , statistical physics
The effect is considered of Gaussian white noise potential on the one‐longitudinal‐optical (LO)‐phonon assisted Raman or photoluminescence process following the resonant excitation. The theory is based on the multiple scattering description of the excitonic state in a random potential. The Lipatov‐Brezin‐Parisi approach is extended into the multistep probability evaluation. It is shown that the joint analysis of the LO‐phonon assisted processes and the excitonic spectral density data gives new information on the exciton lifetime in the region of its localized states as well as at the positive energies where the exciton is almost free.