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Optically‐Detected Magnetic Resonance of Excitons Bound at Te 2 Isoelectronic Centres in CdS 1− x Te x
Author(s) -
Hilton C. P.,
Davies J. J.,
Nicholls J. E.,
Goede O.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510121
Subject(s) - exciton , recombination , chemistry , hamiltonian (control theory) , biexciton , acceptor , spectral line , bound state , polarization (electrochemistry) , binding energy , atomic physics , molecular physics , condensed matter physics , physics , quantum mechanics , mathematical optimization , biochemistry , mathematics , gene
The first ODMR experiments on excitons bound at isoelectronic traps in a II‐VI semiconductor are reported. In CdS 1− x Te x with x ≈ 0.02, recombination emission is obtained at 700 nm from excitons bound at Te 2 pairs. The ODMR spectra obtained by monitoring polarization changes in this emission shows that the recombination occurs from a triplet state, thus confirming that the number of bound particles in the exciton is two. The symmetry of the ODMR spectra is related to the Te 2 pair orientation and this, together with the spin‐Hamiltonian parameters, is consistent with the strong binding postulated for the hole in such an exciton. The additional observation of ODMR signals from shallow neutral donors is taken as evidence for efficient energy transfer between donor‐acceptor pairs and the excitons bound at the Te 2 centres.