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Properties of the Si‐S1 Center in Si 1− x Ge x Solid Solutions
Author(s) -
Bugai A. A.,
Kravtsova I. N.,
Maksimenko V. M.,
Shanina B. D.,
Shakhovtsov V. I.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510119
Subject(s) - germanium , center (category theory) , electron paramagnetic resonance , solid solution , line (geometry) , materials science , anisotropy , spin (aerodynamics) , crystallography , silicon , atomic physics , condensed matter physics , chemistry , nuclear magnetic resonance , physics , optics , metallurgy , thermodynamics , geometry , mathematics
Changes in the widths and integral intensities of the EPR lines of the Si‐S1 center depending on the content of germanium in a Si 1− x Ge x solid solution are examined. The appearance of a line‐width anisotropy is accounted for by the effect of the Ge atoms in the immediate environment of the center on the spin‐spin interaction of the electron pair belonging to the center.