Premium
Investigation of the Field‐Dependent Carrier Mobility in GaAs by Picosecond Photoconductivity Measurements
Author(s) -
Bergner H.,
Brückner V.,
Lenzner M.,
Strobel R.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500283
Subject(s) - photoconductivity , excitation , picosecond , materials science , electron mobility , field (mathematics) , charge carrier , field strength , field dependence , optoelectronics , conductivity , electron , atomic physics , condensed matter physics , chemistry , optics , physics , magnetic field , laser , mathematics , quantum mechanics , pure mathematics
The carrier velocity is measured in Cr‐compensated GaAs in dependence on the applied field strength by picosecond photoconductivity measurements. Two different behaviours are obtained in dependence on the excitation energy. In the case of low excitation a region of negative differential conductivity due to the electron transfer from L‐valley into the L‐valley exists. In the case of high excitation the formation of charge domains lowers the mobility.