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Excitonic Electroabsorption in GaAsGaAlAs Single Quantum Well Waveguide Structures
Author(s) -
Seisyan R. P.,
Toropov A. A.,
Khvostikov V. P.,
Shubina T. V.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500279
Subject(s) - heterojunction , optoelectronics , materials science , spectral line , epitaxy , waveguide , laser , quantum well , molecular beam epitaxy , modulation (music) , optics , biasing , voltage , physics , layer (electronics) , nanotechnology , quantum mechanics , acoustics , astronomy
The electroabsorption spectra of GaAsGaAlAs waveguide p–n heterostructures with single quantum well grown by LPE method are studied at room temperature. The modulation spectra correspond to the quasi‐2D excitonic electroabsorption spectra. An external adjustable laser is used as a source of light propagating parallel to the epitaxial layers. A photolithographically fabricated two‐section sample consisting of LED and modulator regions is investigated as well. An on/off ratio of about 10:1 with a bias voltage U = 6 V is obtained.