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Reflectivity and Dynamic Gratings in Implanted Si Induced by Picosecond Laser Pulses
Author(s) -
Galeckas A.,
Netiksis V.,
Petrauskas M.,
Vaitkus J.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500262
Subject(s) - grating , picosecond , materials science , ion implantation , silicon , charge carrier , relaxation (psychology) , ion , optics , reflectivity , laser , excited state , transient (computer programming) , optoelectronics , atomic physics , chemistry , physics , social psychology , psychology , organic chemistry , computer science , operating system
The relaxation processes are investigated in high‐excited ion‐implanted silicon using transient‐reflectivity and dynamic grating methods in the picosecond time domain. The dependences of the optical parameters of ion‐implanted Si versus implantation dose are presented. The temporal behaviour of the non‐equilibrium charge carriers obtained from the induced‐reflectivity change and grating decay measurements is analysed. The reflectivity decay process is found to be always faster than the corresponding grating decay process. By the numerical calculations the surface recombination velocity is estimated to S = 4 × 10 4 cm/s. The influence of the implantation process on the effective carrier lifetime is discussed.