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Dynamical Nonlinearity and Bistability of Narrow Gap Semiconductors
Author(s) -
Allan G. R.,
Chua P. L.,
Hunter J. J.,
Mackenzie H. A.,
Pidgeon C. R.,
Walker A. C.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500259
Subject(s) - optical bistability , bistability , semiconductor , nonlinear system , nonlinear optical , nonlinear optics , work (physics) , attenuation coefficient , absorption (acoustics) , optics , condensed matter physics , materials science , photon , physics , optoelectronics , quantum mechanics
A brief review is presented of new photo‐Hall studies of linear and nonlinear optical properties of narrow gap semiconductors with specific relevance to optical bistability. InSb is chosen as the prototype crystal for this work. The nonlinear refractive cross‐section (σ = Δ n /Δ N ) is determined to be −1.1 × 10 −18 cm 3 near 5 μm at 77K and −(2.3 ± 1) × 10 −18 cm 3 near 10 μm at 300 K. The two‐photon absorption coefficient is found to be β = 7 cm MW −1 . The results are in good agreement with theoretical prediction.