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Optical Nonlinearity and Bistability in Silicon
Author(s) -
Eichler H. J.,
Brand T.,
Glotz M.,
Smandek B.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500258
Subject(s) - optical bistability , silicon , bistability , materials science , photocurrent , laser , optoelectronics , nonlinear optics , optics , silicon photonics , mixing (physics) , absorption (acoustics) , nonlinear optical , optical switch , nonlinear system , physics , quantum mechanics
The large number of nonlinear optical effects observed in silicon is referenced. Special emphasis is given to laser‐induced absorption and refraction due to free‐carrier generation and optical heating produced by Nd: YAG‐lasers at 1.06 μm. Nonlinear silicon etalons exhibit high‐order optical bistability. Switching powers down to 1 mW are obtained with the injection of an additional photocurrent. Two‐wave mixing is discussed as an alternative switching scheme.