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Carrier Diffusion and Trapping by Quantum Wells
Author(s) -
Uchiki H.,
Kobayashi T.,
Tokunaga E.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500251
Subject(s) - ambipolar diffusion , diffusion , trapping , quantum well , picosecond , fick's laws of diffusion , quantum , carrier lifetime , condensed matter physics , materials science , atomic physics , chemistry , physics , optics , optoelectronics , quantum mechanics , electron , laser , ecology , silicon , biology
A picosecond time‐of‐flight experiment is performed for GaAs/AlGaAs quantum well structures at 77 K in order to obtain diffusion constants and trapping rates of carriers by quantum wells. Analysis of the data by a diffusion model gives an ambipolar diffusion constant of Al x Ga 1− x As ( x ≈ 0.35) of 16 cm 2 /s and a capture efficiency of carriers by a single quantum well with 5 nm width of 0.75.