Premium
Photoinduced Charge Dynamics in Photorefractive Semiconductors
Author(s) -
Astratov V. N.,
Ilinskii A. V.,
Furman A. S.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500241
Subject(s) - photorefractive effect , semiconductor , space charge , charge (physics) , condensed matter physics , impurity , crystal (programming language) , physics , ionization , charge carrier , materials science , optics , optoelectronics , quantum mechanics , ion , electron , computer science , programming language
Photoinduced charge dynamics in photorefractive semiconductors is studied from both, theoretical and experimental points of view in the case of an external field screening. This dynamics shows two different regimes depending on the parameter τ M /τ i where τ M is the Maxwellian time and τ i is the impurity ionization time. For τ M ≪τ i , the stratification effect arises and numerous space charge layers of alternating sign occur in the crystal. Another regime occurs for τ i ≪ τ M , the broadening of the single layer leads to the screening. In BSO, the first regime takes place for room crystal temperatures T , and the second one for 130 K < T < 200 K. Such charge dynamics determines optical nonlinearity of photorefractive semiconductors.