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Theory of Ultrashort Pulse Generation and Amplification by Gain‐Switched Semiconductor Lasers
Author(s) -
Schöll E.,
Schell M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500235
Subject(s) - ultrashort pulse , pulse (music) , laser , optics , amplifier , multiphoton intrapulse interference phase scan , materials science , femtosecond pulse shaping , optical amplifier , semiconductor optical gain , bandwidth limited pulse , optoelectronics , semiconductor laser theory , injection seeder , gain compression , q switching , pulse compression , physics , telecommunications , computer science , radar , cmos , detector
A theory of the nonlinear ultrashort dynamic response of unbiased gain‐switched semiconductor laser amplifiers is presented. For suitable time delays between the incident laser pulse and the injection current pulse driving the laser amplifier, optical pulse compression due to self‐induced gain depletion is found. The finestructure of the emitted pulse resulting from multiple reflections is shown to depend crucially upon the detuning off cavity resonances and upon the ratio of input signal width to cavity round‐trip time.