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Raman Determination of the Faust‐Henry Coefficient of GaAs in the 1.9 to 2.7 eV Range at Ordinary and Low Temperatures
Author(s) -
Zekeng S.,
Prevot B.,
Schwab C.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500110
Subject(s) - faust , raman scattering , raman spectroscopy , excited state , photon , atomic physics , chemistry , photon energy , vibration , analytical chemistry (journal) , materials science , optics , physics , quantum mechanics , art , literature , chromatography
The Faust‐Henry coefficient of GaAs is determined at ordinary and low (20 K) temperatures by using Raman scattering by the TO and LO first order mode vibrations excited by photons with energies located between 1.9 and 2.7 eV. After careful normalization of the experimental results with respect to optical as well as instrumental conditions, the Faust‐Henry coefficient is found to be nearly constant over the energy range investigated with a mean value of C = −0.48 ± 0.04 at 300 K and a slightly lower value ( C = −0.53 ± 0.04) at low temperature. The pure electrooptic contribution to the Raman efficiency of GaAs is also deduced.