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Coherent Compton Effect under Conditions of X‐Ray Dynamical Laue Diffraction
Author(s) -
Bushuev V. A.,
Kazimirov A. Yu.,
Kovalchuk M. V.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221500102
Subject(s) - compton scattering , diffraction , physics , silicon , scattering , optics , electron , x ray , valence (chemistry) , radiation , atomic physics , reflection (computer programming) , nuclear physics , quantum mechanics , optoelectronics , computer science , programming language
A new scheme of the investigation of the coherent Compton scattering (CS), which consists in registration of the CS under conditions of the X‐ray dynamical Laue diffraction is realised. The general features of the angular dependence of the CS intensity MoK α ‐radiation from the exit surface of perfect silicon crystals under the (111) reflection are investigated. The contribution of the silicon valence electrons to the atomic factor of the X‐ray scattering is experimentally determined.