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Light Quenching of Photoconductivity in Indium‐Doped Lead Tin Telluride
Author(s) -
Möllmann K.P.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221490230
Subject(s) - photoconductivity , quenching (fluorescence) , indium , doping , materials science , lead telluride , tin , cadmium telluride photovoltaics , optoelectronics , excitation , analytical chemistry (journal) , chemistry , optics , physics , metallurgy , fluorescence , quantum mechanics , chromatography
In strongly indium doped lead tin telluride ( x > 0.2) at temperatures T < 30 K with interband excitation ( hv > 3 E g ) a “negative” photoconductivity is observed. This effect is attributed to quenching of the photoconductivity caused by background photon flux. The quenching of photoconductivity is discussed in terms of excitation into Jahn‐Teller centres in the conduction band at hv > 3 E g .