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Stable Configuration of an Interstitial Atom with Relaxation Effect in Si and Ge
Author(s) -
Soma T.,
Atarashi N.,
Kagaya H.Matsuo
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221490208
Subject(s) - atom (system on chip) , formalism (music) , interstitial defect , relaxation (psychology) , hexagonal crystal system , atomic physics , materials science , molecular physics , chemistry , crystallography , physics , doping , optoelectronics , art , musical , social psychology , psychology , computer science , visual arts , embedded system
The stable configuration of an interstitial atom in Si and Ge are studied using the perturbational formalism presented earlier and considering the relaxation effect around the interstitial atom. The interstitial atom is most stable at the hexagonal site for Si and Ge. The calculated migration energy of the interstitial atom is smaller than 0.1 eV for Si and about 0.4 eV for Ge.