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Atomic Diffusion in Tetrahedral Semiconductors. Approximative Treatment of Diffusion Theories
Author(s) -
Enders P.,
Schade U.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221490205
Subject(s) - diffusion , dopant , semiconductor , tetrahedron , interpretation (philosophy) , nonlinear system , partial differential equation , semiconductor materials , diffusion equation , materials science , chemistry , statistical physics , mathematics , mathematical analysis , condensed matter physics , physics , thermodynamics , quantum mechanics , crystallography , doping , computer science , economy , service (business) , programming language , economics
The transport of dopants in semiconductors can often be described within an interstitial–substitutional or diffusion‐reaction mechanism, e.g. for Zn in GaAs and in InP. The interpretation of experimental data, e.g. SIMS profiles, is largely complicated by that a nonlinear diffusion equation with several not precisely known coefficients has to be solved. In order to circumvent the parameter fit via the numerical solution of such a differential equation, approximately it is solved by means of the integral balance method. The usefullness of this approach is demonstrated by comparison with experimental and numerical results.