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A SIMS Analysis of Hydrogen Involved Reactions on InSb Surfaces
Author(s) -
Wolf B.,
Zehe A.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221490116
Subject(s) - hydrogen , dissociation (chemistry) , chemistry , cleavage (geology) , reactivity (psychology) , ion , chemical physics , molecular beam epitaxy , secondary ion mass spectrometry , ion beam , analytical chemistry (journal) , atomic physics , layer (electronics) , materials science , epitaxy , organic chemistry , physics , medicine , alternative medicine , pathology , fracture (geology) , composite material
An analogy is established on physical grounds between an ion‐beam damaged cleavage plane and a ‘transient’ imperfection rich growing MBE‐layer. Chemical reactions between the former and hydrogen are analyzed using SIMS as an analytical tool. A high chemical reactivity of the ion‐beam damaged InSb (110) cleavage plane with hydrogen is found and explained by the assumption that the generated imperfections induce molecular dissociation into atomic hydrogen that easily reacts with the surface. Transient imperfections in growing MBE‐layers are suggested to play a similar role with respect to an increased reactivity found during MBE growth.