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Properties of the Quantum Hall Effect of the Two‐Dimensional Electron Gas in the n‐Inversion Layer of InSb Grain Boundaries under High Hydrostatic Pressure
Author(s) -
Kraak W.,
Nachtwei G.,
Herrmann R.,
Gliński M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480214
Subject(s) - condensed matter physics , quantum hall effect , hydrostatic pressure , landau quantization , fermi gas , magnetic field , electrical resistivity and conductivity , hall effect , electron , quantum well , grain boundary , thermal hall effect , physics , chemistry , quantum mechanics , laser , microstructure , thermodynamics , crystallography
The magnetotransport properties of the two‐dimensional electron gas (2DEG) confined at the interface of the grain boundary in p‐type InSb bicrystals are investigated. Under high hydrostatic pressures and in high magnetic fields ( B > 5 T) the integral quantum Hall regime is reached, where the Hall resistance ϱ xy is quantized to h/e 2 j ( j is the number of filled Landau levels of the 2DEG). In this high field regime detailed measurements are given of the resistivity ϱ xx and the Hall resistance ϱ xy as function of temperature T and current density j x . An unexpected high accuracy of the Hall resistance ϱ xy at magnetic field values close to a fully occupied Landau level is found, despite the high value of the diagonal resistivity ϱ xx . At high current densities j x in the quantum Hall regime ( j = 1) a sudden breakdown of the quantized resistance value associated with a jump‐like switching to the next lower quantized value h/2e 2 is observed. A simple macroscopic picture is proposed to account for these novel transport properties associated with the quantum Hall effect.