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Quantized Photoemission from Quantum Wells in Ultrathin Films of Wide‐Gap Semiconductors in a Tilted Magnetic Field
Author(s) -
Majumdar C.,
Maity A. B.,
Chakravarti A. N.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480213
Subject(s) - condensed matter physics , semiconductor , magnetic field , quantum well , photon energy , band gap , electron , photon , angle resolved photoemission spectroscopy , field (mathematics) , materials science , inverse photoemission spectroscopy , physics , electronic structure , optoelectronics , optics , quantum mechanics , laser , mathematics , pure mathematics
An attempt is made to investigate the effects of a tilted quantizing magnetic field on the photoemission from quantum wells in ultrathin films of wide‐gap semiconductors, taking n‐type GaAs as an example. The photoemission exhibits an increasing step‐like variation with increasing photon energy and is also found to have oscillatory dependence on the magnetic field, its orientation, and the film thickness. Strikingly, the dependence of the emission on film thickness, for photon energies considerably lower than the electron affinity, shows that it gets quantized.