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Impurity Binding Energies in Heterostructures. Two‐Band Model
Author(s) -
Albuquerque E. L.,
Costa W. B.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480211
Subject(s) - heterojunction , tight binding , conduction band , hamiltonian (control theory) , impurity , semiconductor , band gap , valence band , condensed matter physics , electronic structure , density of states , formalism (music) , transfer matrix , valence (chemistry) , semimetal , physics , materials science , optoelectronics , quantum mechanics , electron , mathematics , computer science , art , mathematical optimization , musical , visual arts , computer vision
A transfer‐matrix treatment is presented for a one‐dimensional semiconductor heterostructure to discuss its electronic density of states. A two band formalism is considered with direct gap between the valence and conduction bands. The system is described by a tight‐binding Hamiltonian, with interactions between first neighbours. Using numerical data of Al x Ga 1− x As–GaAs some interesting features in its electronic structure frequencies around 2 eV are shown.