Impurity Binding Energies in Heterostructures. Two‐Band Model | Zendy

Albuquerque E. L. | Zendy; Costa W. B. | Zendy

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Impurity Binding Energies in Heterostructures. Two‐Band Model

Author(s) -

Albuquerque E. L.,

Costa W. B.

Publication year - 1988

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221480211

Subject(s) - heterojunction , tight binding , conduction band , hamiltonian (control theory) , impurity , semiconductor , band gap , valence band , condensed matter physics , electronic structure , density of states , formalism (music) , transfer matrix , valence (chemistry) , semimetal , physics , materials science , optoelectronics , quantum mechanics , electron , mathematics , computer science , art , mathematical optimization , musical , visual arts , computer vision

A transfer‐matrix treatment is presented for a one‐dimensional semiconductor heterostructure to discuss its electronic density of states. A two band formalism is considered with direct gap between the valence and conduction bands. The system is described by a tight‐binding Hamiltonian, with interactions between first neighbours. Using numerical data of Al x Ga 1− x As–GaAs some interesting features in its electronic structure frequencies around 2 eV are shown.

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