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Electron Raman Scattering in Semiconductor Quantum Wells
Author(s) -
Riera R.,
Comas F.,
Giner C. Trallero,
Pavlov S. T.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480210
Subject(s) - heterojunction , atomic physics , raman scattering , quantum well , electron , effective mass (spring–mass system) , scattering , x ray raman scattering , semiconductor , physics , photon , valence (chemistry) , spectral line , excitation , phonon , condensed matter physics , raman spectroscopy , quantum mechanics , laser
Differential‐cross‐section for a type of electronic Raman‐scattering process in a semiconductor quantum‐well heterostructure is calculated considering inter‐valley transitions between the system of sub‐bands provided by electron confinement. The intermediate states consist of virtual electron–hole pairs belonging to sub‐bands from the conduction and valence bands respectively. The T = 0 K case is assumed and transitions with the participation of phonons are not included in the analysis. The quantum‐well is modeled with infinite potential barriers at the interfaces and the effective‐mass‐approximation is utilized. The dependence of the cross‐section with respect to the incident and emitted photon frequencies is analyzed for arbitrary polarization of the secondary radiation field. Singularities in the emission spectra as well as the step‐like character of the emission and excitation spectra are predicted. Numerical results and estimations of the process quantum‐efficiency for the case of a GaAs/Al x Ga 1− x As heterostructure are reported.