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Thermal Parameters and Probability Density Functions of the Narrow Gap Semiconductor Bi 2 Te 3 under Hydrostatic Pressure
Author(s) -
Kullmann W.,
Rauh H.,
Geick R.,
Steigenberger U.,
Kuhs W. F.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480202
Subject(s) - hydrostatic pressure , semiconductor , hydrostatic equilibrium , neutron diffraction , materials science , condensed matter physics , amplitude , crystal (programming language) , diffraction , thermal , crystal structure , atomic physics , crystallography , chemistry , physics , thermodynamics , optics , quantum mechanics , optoelectronics , programming language , computer science
The thermal parameters and the probability density functions of the atoms in the narrow gap semiconductor Bi 2 Te 3 are investigated by neutron diffraction experiments under hydrostatic pressure. The results show rather complex intrasandwich bonding properties of the atoms in this sandwich structure. Especially Bi shows relatively large vibration amplitudes parallel to the trigonal axis in contradiction to former X‐ray studies. The experiments show evidence for healing effects of crystal distortions under hydrostatic pressure.