Premium
Electrons in MIS Inversion and Accumulation Layers. Exchange and Correlation Effects within a Modified Thomas‐Fermi Theory
Author(s) -
Übensee H.,
Paasch G.,
Bundfuss D.,
Zöllner J.P.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480141
Subject(s) - formalism (music) , inversion (geology) , statistical physics , fermi gamma ray space telescope , fermi level , electronic correlation , electronic structure , electronic band structure , electron , computational physics , simple (philosophy) , condensed matter physics , physics , quantum mechanics , geology , art , musical , visual arts , paleontology , philosophy , epistemology , structural basin
Abstract For the calculation of the electronic structure of inversion and accumulation layers in MIS‐structures self‐consistent methods based on the density functional formalism are well developed. The numerical effort for such calculations is drastically reduced by a modified Thomas‐Fermi method developed in the last years. The method is a unique one for both, inversion and accumulation layers and well suited for modeling of MIS‐devices. It is proved that this method is very accurate. Several problems are solved first by using it, but till now always neglecting exchange and correlation effects. It is shown how one can include them as a part of the effective potential into the modified Thomas‐Fermi method by using a simple calculation scheme. A systematic investigation of the influence of exchange and correlation effects on the complete electronic sub‐band structure is presented for several III–V‐semiconductors at low temperature and for Si at both room and low temperature.