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Magnetic Polarons in EuO
Author(s) -
Samokhvalov A. A.,
Viglin N. A.,
Gizhevskii B. A.,
Arbuzova T. I.,
Chebotaev N. M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480133
Subject(s) - polaron , paramagnetism , condensed matter physics , magnetic semiconductor , ion , electron paramagnetic resonance , charge carrier , laser linewidth , electron , materials science , chemistry , nuclear magnetic resonance , ferromagnetism , physics , laser , quantum mechanics , optics , organic chemistry
The existence of spin‐polarized complexes or magnetic polarons in magnetic semiconductors has been suggested theoretically some time ago, but up to now there is little experimental evidence of this phenomenon. With this in view, electron paramagnetic resonance is investigated ( g ‐factor and linewidth temperature coefficient) and also several other electrical and magnetic parameters of EuO‐based magnetic semiconductors with various donor concentrations (oxygen vacancies or Gd 3+ ions substituting Eu 2+ ions). The results of the investigation show that in a limited region of donor concentrations and temperatures there occurs a localization of charge carriers which may be attributed to the formation of magnetic polarons.