Premium
Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder. II. Wide Conduction Band
Author(s) -
Auslender M. I.,
Kogan E. M.,
Tretyakov S. V.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480126
Subject(s) - condensed matter physics , ferromagnetism , electron , semiconductor , magnetic semiconductor , doping , thermal conduction , density of states , spin (aerodynamics) , exchange interaction , metal–insulator transition , conduction band , enhanced data rates for gsm evolution , effective mass (spring–mass system) , physics , materials science , electrical resistivity and conductivity , quantum mechanics , telecommunications , computer science , thermodynamics
Theoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.