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The Influence of Compensation on the Hall Effect and Magnetoresistance of n‐Hg 0.8 Cd 0.2 Te
Author(s) -
Tsidilkovskii I. M.,
Arapov Yu. G.,
Zvereva M. L.,
Brandt N. B.,
Kulbachinskii V. A.,
Gorbatyuk I. N.,
Elizarov A. I.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480117
Subject(s) - condensed matter physics , magnetoresistance , impurity , hall effect , magnetic field , metal–insulator transition , atmospheric temperature range , physics , materials science , electrical resistivity and conductivity , quantum mechanics , thermodynamics
Magnetic field dependences of the transverse (ϱ xx ) and the Hall (ϱ xy ) resistances in the temperature range 0.32 ≦ T ≦ 4.2 K on compensated n‐Hg 0.8 Cd 0.2 Te samples with 0.4 ≦ K ≦ 0.8 and K ⪆ 0.9 are studied. It is shown that the metal–insulator transition in fields H ⪆ H 0 xy ( H 0 xy is the field in which ϱ xy begins to grow sharply) is a result of the separation of the impurity states from the conduction band and is not connected with the Wigner crystallization. The weakening of ϱ xy ( H ) and ϱ xx ( H ) growth in strong magnetic fields with the increase of K may be satisfactorily explained in the framework of inhomogeneous medium theory.