The Influence of Compensation on the Hall Effect and Magnetoresistance of n‐Hg 0.8 Cd 0.2 Te | Zendy

Tsidilkovskii I. M. | Zendy; Arapov Yu. G. | Zendy; Zvereva M. L. | Zendy; Brandt N. B. | Zendy; Kulbachinskii V. A. | Zendy; Gorbatyuk I. N. | Zendy; Elizarov A. I. | Zendy

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The Influence of Compensation on the Hall Effect and Magnetoresistance of n‐Hg 0.8 Cd 0.2 Te

Author(s) -

Tsidilkovskii I. M.,

Arapov Yu. G.,

Zvereva M. L.,

Brandt N. B.,

Kulbachinskii V. A.,

Gorbatyuk I. N.,

Elizarov A. I.

Publication year - 1988

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221480117

Subject(s) - condensed matter physics , magnetoresistance , impurity , hall effect , magnetic field , metal–insulator transition , atmospheric temperature range , physics , materials science , electrical resistivity and conductivity , quantum mechanics , thermodynamics

Magnetic field dependences of the transverse (ϱ xx ) and the Hall (ϱ xy ) resistances in the temperature range 0.32 ≦ T ≦ 4.2 K on compensated n‐Hg 0.8 Cd 0.2 Te samples with 0.4 ≦ K ≦ 0.8 and K ⪆ 0.9 are studied. It is shown that the metal–insulator transition in fields H ⪆ H 0 xy ( H 0 xy is the field in which ϱ xy begins to grow sharply) is a result of the separation of the impurity states from the conduction band and is not connected with the Wigner crystallization. The weakening of ϱ xy ( H ) and ϱ xx ( H ) growth in strong magnetic fields with the increase of K may be satisfactorily explained in the framework of inhomogeneous medium theory.

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