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Effect of a Tilted Magnetic Field on the Size‐Quantized Levels of Quantum Wells in Ultrathin Films of Narrow‐Gap Semiconductors
Author(s) -
Bose M. K.,
Majumdar C.,
Maity A. B.,
Chakravarti A. N.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480114
Subject(s) - condensed matter physics , magnetic field , quantum well , band gap , semiconductor , orientation (vector space) , materials science , electric field , field (mathematics) , physics , mathematics , optics , quantum mechanics , geometry , optoelectronics , laser , pure mathematics
An attempt is made to investigate the effects of a tilted magnetic field on the size‐quantized levels of quantum wells in ultrathin films of narrow‐gap semiconductors, taking n‐type InSb as an example. It is found that, in general, the energy eigenvalue of the lowest magneto‐size‐quantized level increases with increasing magnetic field and decreases both, with increasing film thickness and with increasing orientation of the magnetic field, for given values of the other parameters. Besides, it is observed that the difference of the energy eigenvalues of the lowest two magnetic sub‐levels of the lowest electric sub‐band reaches a maximum at a given magnetic field, showing a decrease with its orientation, while it increases with the film thickness.