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Size‐Quantum Effect of the Energy of a Charge Carrier in a Semiconductor Crystallite
Author(s) -
Pan J. S.,
Pan H. B.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221480111
Subject(s) - crystallite , charge carrier , semiconductor , dielectric , vibration , condensed matter physics , materials science , charged particle , physics , optoelectronics , quantum mechanics , ion , metallurgy
The size‐quantum effect of the energy of a charged carrier in a spherical semiconductor crystallite embedded in another spherical dielectric layer is discussed and the interaction of the charged carrier with surface optical (SO) and longitudinal optical (LO) vibrations is taken into account. In the first‐order approximation of the energy the charged carrier does not interact with SO vibrations, and it interacts only with LO vibration of the dielectric in which the charged carrier is located. The interaction energy between the charged carrier and LO vibrations will increase with decreasing the size of crystallite.