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Impurity Effects in the Raman and Luminescence Spectra of Nitrogen‐Doped GaP
Author(s) -
Dos Santos M. P.,
Hirlimann C.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470239
Subject(s) - raman spectroscopy , luminescence , impurity , raman scattering , gallium phosphide , exciton , doping , materials science , molecular physics , analytical chemistry (journal) , chemistry , optoelectronics , condensed matter physics , optics , physics , organic chemistry , chromatography
Abstract Gallium phosphide doped with up to 10 19 cm −3 nitrogen atoms, is used to show impurity induced effects in both, Raman and luminescence spectra. A simple way to distinguish between Raman and luminescence is given, which incidently allows to observe an intermediate behavior for some peaks. The results can be split into two different classes: the ones which are dependent on the nature of the impurity, like trapped exciton lines in the luminescence spectrum or localized Raman modes, and the ones which are independent from the nature of the impurity, like disorder activated first‐order Raman scattering (DAFORS). The Raman results are obtained under resonant conditions.