Premium
Photocarrier Drift Mobility in Bulk Vitreous GeSe 3 in the Temperature Range 60 to 300 K
Author(s) -
Calas J.,
AbdelMaksoud S. M.,
Averous M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470222
Subject(s) - atmospheric temperature range , analytical chemistry (journal) , electron , transit time , electron mobility , range (aeronautics) , materials science , chemistry , atomic physics , physics , thermodynamics , optoelectronics , nuclear physics , transport engineering , engineering , composite material , chromatography
From the transit time technics with two blocking electrodes, the drift mobility for the two types of carriers is determined for the bulk GeSe 3 in the temperature range 50 to 300 K. These values at room temperature are respectively μ dn = 10 −2 cm 2 V −1 s −1 and μ dp = 10 −1 cm 2 V −1 s −1 . Initial photocarrier densities n (0) = 5 × 10 7 cm −3 and p (0) = 3 × 10 7 cm −3 are also reported. Successively microscopic mobilities are deduced respectively, μ on = 6 × 10 −2 cm 2 V −1 s −1 for electrons and μ op = 10 −1 cm 2 V −1 s −1 for holes. From these values an estimation of the ratio N c / N tn ≈ 1 and N v / N tp ≈ 0.5 is lastly provided as well as trap densities N tn ≈ 10 20 cm −3 and N tp ≈ 10 21 cm −3 .