Photocarrier Drift Mobility in Bulk Vitreous GeSe 3 in the Temperature Range 60 to 300 K

From the transit time technics with two blocking electrodes, the drift mobility for the two types of carriers is determined for the bulk GeSe 3 in the temperature range 50 to 300 K. These values at room temperature are respectively μ dn = 10 −2 cm 2 V −1 s −1 and μ dp = 10 −1 cm 2 V −1 s −1 . Initial photocarrier densities n (0) = 5 × 10 7 cm −3 and p (0) = 3 × 10 7 cm −3 are also reported. Successively microscopic mobilities are deduced respectively, μ on = 6 × 10 −2 cm 2 V −1 s −1 for electrons and μ op = 10 −1 cm 2 V −1 s −1 for holes. From these values an estimation of the ratio N c / N tn ≈ 1 and N v / N tp ≈ 0.5 is lastly provided as well as trap densities N tn ≈ 10 20 cm −3 and N tp ≈ 10 21 cm −3 .