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Thermoelectric Properties of p‐Hg 1− x Cd x Te
Author(s) -
Höschl P.,
Moravec P.,
Belas E.,
Franc J.,
Grill R.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470221
Subject(s) - seebeck coefficient , thermoelectric effect , acceptor , vacancy defect , materials science , divalent , chemistry , analytical chemistry (journal) , condensed matter physics , crystallography , thermodynamics , physics , metallurgy , chromatography
Low temperature (77 to 300 K) thermoelectric measurements of undoped and well characterized p‐Hg 1− x Cd x Te ( x ≈ 0.2) samples are reported. Analysis of the thermoelectric power is suggested on the basis of a three acceptor level model with one divalent acceptor (Hg‐vacancy) and one monovalent acceptor (foreign atom). From the temperature at which reversal of sign of the thermoelectric power takes place the concentration of holes at 77 K may be simply determined. The method is also suitable for the investigation of homogeneity of wafers of Hg 1− x Cd x Te with x ≈ 0.2.