Premium
Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder I. Narrow Conduction Band
Author(s) -
Kogan E. M.,
Auslender M. I.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470220
Subject(s) - condensed matter physics , ferromagnetism , magnetic semiconductor , electron , spin (aerodynamics) , semiconductor , physics , electrical resistivity and conductivity , density of states , doping , thermal conduction , enhanced data rates for gsm evolution , exchange interaction , anderson impurity model , quantum mechanics , thermodynamics , telecommunications , computer science
Theoretical investigation is made of the temperature induced metal‐insulator transition in doped ferromagnetic semiconductors, described by s‐d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density fluctuations. The electrons are described in tight binding approximation. Using ideas and methods of Anderson localization theory simple formulas are obtained, which connect the mobility edge with shortrange order characteristics of the magnetic subsystem‐static spin correlators. The theory developed is applied to the description of the resistivity of CdCr 2 Se 4 . The theoretical results are in agreement with experiment in a wide temperature range.