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Relations between Structure, Bonding, and Nature of Point Defects in Layered Crystals of Tetradymite Structure
Author(s) -
Horák J.,
Starý Z.,
Klikorka J.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470206
Subject(s) - crystallography , impurity , materials science , electrical resistivity and conductivity , condensed matter physics , crystallographic defect , ion , conductivity , chemistry , physics , quantum mechanics , organic chemistry
A quantum chemical calculation of bonding parameters in Sb 2 Te 3 , Bi 2 Te 3 , Bi 2− x In x Te 3 , and Bi 2 Te 3− x S x single crystals is carried out. The electric conductivity σ ⟂ c and Hall constant R H ( B ∥ c ) of the crystals in the Bi 2 Te s− x S x system are measured. These results present a basis for the discussion of the different role of impurities in anion and cation sublattices with respect to the bonding parameters and the concentration of anti‐site defects in the Bi 2 Te 3− x S x system is calculated and compared with the formation energy of the same defects in the Bi 2− x In x Te 3 system.