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Temperature Dependence of the Photoluminescence in GaAsGaAlAs Multiple Quantum Well Structure
Author(s) -
Chiari A.,
Colocci M.,
Fermi F.,
Li Yuzhang,
Querzoli R.,
Vinattieri A.,
Zhuang Weihua
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470148
Subject(s) - photoluminescence , recombination , spontaneous emission , exciton , quantum well , excitation , luminescence , condensed matter physics , non radiative recombination , materials science , electron , intensity (physics) , atomic physics , emission intensity , atmospheric escape , quantum efficiency , molecular physics , chemistry , optoelectronics , physics , optics , laser , biochemistry , gene , quantum mechanics , planet , astrophysics
The temperature dependence of the photoluminescence (PL) of GaAs/GaAlAs multiple quantum wells is investigated. Emissions related to transitions between n = 1, 2, 3 electron and hole subbands are observed. Theoretical evaluation of the energy levels fits nicely the experimental data. The temperature dependence of peak position and photoluminescence intensity and the dependence of PL intensity on the power excitation show that there are three different temperature regions. At low temperatures (22 to 40 K) the main emission is ascribed to exciton recombination while at temperatures higher than 100 K it can be attributed to free carrier recombination. In the intermediate temperature region the PL involves both, excitonic and free carrier recombination. Thermally activated non‐radiative recombination processes strongly reduce the luminescence quantum efficiency.