Premium
Effect of Broadening of Tail States on the Einstein Relation in Heavily Doped Compensated Semiconductors
Author(s) -
Ghosh S.,
Chakravarti A. N.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470140
Subject(s) - einstein relation , condensed matter physics , magnetic field , semiconductor , einstein , doping , electron , physics , quantization (signal processing) , thermal diffusivity , quantum mechanics , mathematics , statistics , metric (unit) , operations management , economics
An attempt is made to study the dependence of the Einstein relation on carrier concentration in heavily doped compensated semiconductors with broadened tail states, both in the presence and absence of a quantizing magnetic field, taking n‐InSb as an example. It is found that, corresponding to a given free electron concentration, the broadening of the tail states modifies the Einstein relation by enhancing the diffusivity–mobility ratio in the absence of magnetic quantization while the reverse is observed in the presence of a quantizing magnetic field. Besides, the rate of decrease of the ratio with increasing magnetic field in the quantum limit is found to be independent of such broadening effects.