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Influence of Bond‐Angle and Dihedral‐Angle Disorders on the Top of the Valence Band of Amorphous Germanium
Author(s) -
Ratag V. M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221470128
Subject(s) - dihedral angle , germanium , valence band , valence bond theory , valence (chemistry) , materials science , band gap , amorphous solid , condensed matter physics , molecular physics , crystallography , atomic physics , chemistry , physics , optoelectronics , atomic orbital , silicon , quantum mechanics , molecule , electron , hydrogen bond , organic chemistry
The electronic structure of amorphous germanium (a‐Ge) is considered using a tight‐binding scheme with all first‐neighbor couplings in a continuous random network. The dihedral‐angle and bond‐angle disorders are found to be important at the valence‐band‐edge and responsible for the observed features near the top of the valence band. At the top of the valence band of a‐Ge a tail of localized states ≈ 0.4 eV in width is found.