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The Effect of Structural Imperfections on Macroscopic Properties of Tellurium‐Type Anisotropic Semiconductors
Author(s) -
Shenderovskii V. A.,
Tomchuk P. M.,
Gorley P. N.,
Gavaleshko N. P.,
Tarasyuk I. I.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221460227
Subject(s) - condensed matter physics , semiconductor , materials science , magnetoresistance , anisotropy , scattering , conductivity , mean free path , tellurium , carrier scattering , electrical resistivity and conductivity , magnetic field , physics , optics , optoelectronics , quantum mechanics , metallurgy
A theory of transport phenomena for anisotropic semiconductors is developed in which inelastic carrier scattering is dominating and the Debye screening radius of defects is large compared with the carrier mean free path. The effect of edge dislocations on electrical conductivity, magnetoresistance, and transverse and longitudinal Nernst‐Ettingshausen effects is investigated using tellurium as a model semiconductor. The defects are found to considerably affect the electrical conductivity of Te depending on the magnitude and the direction of magnetic field.