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Stimulated Emission of the I 1 – TA (P M ) Band in CdS
Author(s) -
Hönig T.,
Gutowski J.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221460219
Subject(s) - exciton , excited state , acceptor , excitation , biexciton , atomic physics , photoluminescence , phonon , emission spectrum , spectroscopy , semiconductor , stimulated emission , materials science , laser , physics , molecular physics , spectral line , condensed matter physics , optoelectronics , optics , quantum mechanics , astronomy
In CdS, a strong transverse‐acoustic phonon replica of the acceptor–exciton recombination line I 1 is observable. This band is called I 1 – TA or P M band. Under high excitation desities, the I 1 – TA shows a stimulated emission behavior, which leads to laser activity under suitable arrangements. By means of excitation spectroscopy, this behavior is shown to be strongly correlated with the creation of acceptor–exciton complexes (A 0 ,X) in their ground and excited electronic states. Thus, the I 1 – TA is not only unambiguously demonstrated to be an efficient recombination channel of acceptor–exciton complexes but also offers an excellent possibility to realize a four‐level bound‐exciton laser in CdS. This emission band is a valuable object to deepen the study of excited states of bound excitons in semiconductors under the use of high excitation densities.