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Energy Band Structure of (GaAs) m (AlAs) m Semiconductor Superlattices with Ultrathin Layers
Author(s) -
Gushchi. A.,
Dunaevskii S. M.,
Nikulin V. K.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221460212
Subject(s) - superlattice , heterojunction , condensed matter physics , electronic band structure , band gap , semiconductor , materials science , hamiltonian (control theory) , band offset , classification of discontinuities , photoluminescence , physics , optoelectronics , valence band , mathematical optimization , mathematical analysis , mathematics
The local band structure of the (GaAs) m (AlAs) m superlattices is calculated within the framework of the cluster recursion method of Haydock‐Heine‐Kelly. The Hamiltonian is constructed in the sp 3 s*‐basis of the tight‐binding method. The diagonal matrix elements and orbital populations are calculated in a self‐consistent way. The superlattice consists of alternate layers of GaAs and AlAs, each containing one to eight (110) layers of zincblende structure. The limiting cases of such a superstructure are the ideal heterojunction and a semiconductor material made up of alternate GaAs and AlAs layers. The paper presents the calculated densities of electron states for (GaAs) 1 · (AlAs) 1 and band discontinuities at the heterojunction. The dependence of the superlattice energy gap width on the alternate layer thickness derived here is in qualitative agreement with the experimental photoluminescence data.