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Green's Function Approach to Nonequilibrium Charge Carriers in Direct Gap Semiconductors Generated by Short Light Pulses
Author(s) -
Glaeske H.,
Schubert M.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221460141
Subject(s) - non equilibrium thermodynamics , physics , semiconductor , excited state , relaxation (psychology) , electron , charge carrier , excitation , phonon , laser , green's function , boundary value problem , field (mathematics) , plasma , atomic physics , function (biology) , condensed matter physics , quantum mechanics , psychology , social psychology , mathematics , evolutionary biology , pure mathematics , biology
In the present paper the Green's function approach to nonequilibrium quasi‐free charge carriers in highly excited semiconductors is applied. In doing this a system of kinetic equations for generalized Wigner distributions of renormalized quasi‐electrons and holes is obtained, that takes into account (additionally to well‐known published results) the interaction of the longitudinal optical phonons and the intraband interaction of the radiation field with the electron–hole plasma. Thus, utilizing the corresponding field equations and the suitable boundary conditions, relaxation processes in the semiconductor after excitation by a short laser pulse and a laser probe beam experiment may be described.