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Model Clusters and Electronic Characteristics of Deep‐Level Impurities in Silicon
Author(s) -
Russo N.,
Toscano M.,
Barone V.,
Minichino C.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450251
Subject(s) - humanities , computer science , art
The X-Si4H12 and X-Si20H28 (X = P or N) cluster models were studied by the MNDO method. Energy levels of all the model clusters are reported. Both the highest occupied and lowest empty one-electron levels are localized. In the case of P impurity, the initial on-center arrangement corresponds to an abs. min. energy leading to 4-equiv. Si-P bond lengths of 0.235 nm
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