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Galvanomagnetic Properties of p‐Hg 1− x Cd x Te
Author(s) -
Höschl P.,
Moravec P.,
Prosser V.,
Szöcs V.,
Grill R.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450230
Subject(s) - acceptor , vacancy defect , hall effect , impurity , ionization , electron mobility , electron , atomic physics , ionization energy , phonon , atom (system on chip) , chemistry , electrical resistivity and conductivity , condensed matter physics , materials science , analytical chemistry (journal) , crystallography , physics , ion , organic chemistry , quantum mechanics , chromatography , computer science , embedded system
A three‐level model for one divalent acceptor (Hg vacancy) and one monovalent acceptor (foreign atom) is suggested. The hole mobility is determined for p‐like wave functions (polar phonons and ionized impurities). Low temperature (10 to 300 K) galvanomagnetic measurements of undoped p‐Hg 1− x Cd x Te ( x ≈ 0.2) are reported. A simultaneous analysis of the hole concentration and Hall mobility data in the region 10 to 100 K and Hall coefficient and conductivity data in the region 100 to 300 K yield ionization energies of ≈ 6 meV and ≈ 0.7 E g (energy gap) for the Hg vacancy and ≈ 12 meV for the foreign acceptor. In the temperature region 100 to 300 K the mobility of electrons is determined, too.