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Low‐Temperature Conductivity of a Weakly Disordered, Strongly Anisotropic Two‐Dimensional System with Electron—Electron Interaction. Application to Germanium Bicrystals and to Surface Superlattices
Author(s) -
Firsov Yu. A.,
Nakhmedov E. P.,
Prigodin V. N.,
Weller W.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450229
Subject(s) - condensed matter physics , superlattice , germanium , electron , anisotropy , scattering , conductivity , electron scattering , transverse plane , fermi gas , materials science , physics , quantum mechanics , silicon , structural engineering , engineering , metallurgy
In the framework of a simple model for the electron gas in the grain boundary (inversion layer) of a semiconductor bicrystal or in a surface superlattice the quantum corrections to the conductivity tensor due to the electron—electron interaction are calculated. The results have a typical two‐dimensional form for w ⟂ 2≫ k B T ħ/τ and show a crossing‐over to typical one‐dimensional behaviour for w ⟂ 2≪ k B Tħ /τ. Here w ⟂ is the transverse overlap integral betwween neighbouring dislocation tubes, τ the relaxation time due to scattering on the disorder. Also the weak localization corrections are calculated.