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Effect of Doping on Parametric Amplification in Piezoelectric Semiconductors
Author(s) -
Aghamkar P.,
Sen P.,
Sen P. K.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450134
Subject(s) - semiconductor , parametric statistics , doping , piezoelectricity , materials science , excitation , crystal (programming language) , laser , electric field , optics , condensed matter physics , nonlinear system , optoelectronics , physics , composite material , statistics , mathematics , quantum mechanics , computer science , programming language
Using the straightforward coupled‐mode theory, the parametric amplification is analytically investigated in a doped piezoelectric semiconductor. The origin of the nonlinear interaction is taken to be in the second‐order optical susceptibility χ (2) arising from the nonlinear induced current density. The threshold value of the pump electric field E 0th and the corresponding excitation intensity are obtained for crystals for various concentrations. E 0th is found to decrease with rise in doping concentration. The investigation also reveals that the phenomena of self‐focusing and self‐defocusing can be enhanced in these crystals. The parametric gain constant is obtained for both, lightly and highly doped semiconductors. Numerical estimations made for n‐InSb crystal, at 77 K duly irradiated by frequency doubled pulsed 10.6 μm CO 2 lasers, yield ∣χ (2) ∣ comparable with that observed experimentally.