z-logo
Premium
The Faraday Effect Approach to a Study of A IV B VI Narrow‐Gap Semiconductor Band Structure
Author(s) -
Martynchuk E. K.,
Sizov F. F.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450131
Subject(s) - faraday effect , physics , semiconductor , band gap , electron , condensed matter physics , analytical chemistry (journal) , magnetic field , atomic physics , chemistry , nuclear physics , optoelectronics , chromatography , quantum mechanics
The magnetooptical Faraday effect in the transparency range ħh ω ≦ E g of Pb 1− x Sn x Te (0 ≦ x ≦ 0.23) and PbSe single crystals with carrier concentrations from 2 × 10 16 to 2 × 10 18 cm −3 is investigated under applied magnetic fields up to 6 T over the temperature range T = 4.2 to 300 K. g ‐factors and effective masses of carriers are determined within the range of T = 4.2 to 300 K. It is shown that the experimental results with or without quantization of the energy spectrum may be interpreted only under condition ∣ g c ∣ > ∣ g v ∣, where g c and g v are the g ‐factors of electrons and holes. Some new values of Dimmock six‐band model parameters g   t ±and g   l ±are obtained taking into account ∣ g c ∣ > ∣ g v ∣ condition.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom