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The Faraday Effect Approach to a Study of A IV B VI Narrow‐Gap Semiconductor Band Structure
Author(s) -
Martynchuk E. K.,
Sizov F. F.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450131
Subject(s) - faraday effect , physics , semiconductor , band gap , electron , condensed matter physics , analytical chemistry (journal) , magnetic field , atomic physics , chemistry , nuclear physics , optoelectronics , chromatography , quantum mechanics
The magnetooptical Faraday effect in the transparency range ħh ω ≦ E g of Pb 1− x Sn x Te (0 ≦ x ≦ 0.23) and PbSe single crystals with carrier concentrations from 2 × 10 16 to 2 × 10 18 cm −3 is investigated under applied magnetic fields up to 6 T over the temperature range T = 4.2 to 300 K. g ‐factors and effective masses of carriers are determined within the range of T = 4.2 to 300 K. It is shown that the experimental results with or without quantization of the energy spectrum may be interpreted only under condition ∣ g c ∣ > ∣ g v ∣, where g c and g v are the g ‐factors of electrons and holes. Some new values of Dimmock six‐band model parameters g t ±and g l ±are obtained taking into account ∣ g c ∣ > ∣ g v ∣ condition.