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Electrical Conductivity Anisotropy in Tin‐Doped n‐Type Indium Selenide
Author(s) -
Pomer F.,
Bonet X.,
Segura A.,
Chevy A.
Publication year - 1988
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221450125
Subject(s) - anisotropy , indium , tin , impurity , doping , condensed matter physics , electrical resistivity and conductivity , conductivity , electron , selenide , materials science , charge carrier , free electron model , planar , thermal conduction , activation energy , chemistry , selenium , physics , optics , optoelectronics , computer graphics (images) , organic chemistry , computer science , metallurgy , composite material , quantum mechanics
Electrical conductivity anisotropy of n‐type indium selenide samples doped with different concentrations of tin is studied between 30 and 300 K. The anisotropy ratio is found to depend exponentially on the inverse temperature, the activation energy E , and the pre‐exponential factor varying with free carrier concentration. This behaviour is explained by the existence of potential wells created by planar aggregates of ionized donor impurities screened by free electrons. A simple model in which the depth of these potential wells is calculated as a function of temperature, charge density in the planar defects, and electron concentration, gives account of the measured activation energies, but does not explain the high value of the anisotropy ratio. The existence of strictly two‐dimensional electrons bound to planar defects not contributing to the electrical conduction across the layers is proposed to explain this result.