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Three‐Branch Excitonic Polaritons in Direct Band Gap Cubic Semiconductors
Author(s) -
Khamsasy Ch.,
Van Hieu Nguyen,
Viet Nguyen Ai
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221440223
Subject(s) - brillouin zone , exciton , condensed matter physics , polariton , semiconductor , physics , direct and indirect band gaps , electronic band structure , dispersion relation , photon , band gap , quantum mechanics
The transition is studied between a photon and “heavy” and “light” excitons in direct‐band gap cubic semiconductors with a fourfold degenerated highest valence band at the center of the Brillouin zone. The transition matrix elements are calculated in the second‐order approximation of the perturbation series with respect to a small constant proportional to the difference of the mass of the heavy and light holes. The algebraic equation determining the dispersion of the three‐branch polaritons is derived. The spin structure of the wave functions of the corresponding excitons is established.