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An Experimental Proof of the Valence Electron Density Variation in Silicon under High Electric Field
Author(s) -
Pietsch U.,
Unger K.
Publication year - 1987
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221430242
Subject(s) - electric field , silicon , electron , valence (chemistry) , variation (astronomy) , condensed matter physics , materials science , physics , quantum mechanics , optoelectronics , astrophysics
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